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2N60 600V N-Channel power mosfet transistor
OverviewQuick DetailsPlace of Origin:Shandong, China (Mainland)Brand Name:JFModel Number:2N60-TUType:Field-Effect TransistorPackage Type:Thr
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2N60 600V N-Channel power mosfet transistor
Product Details
2N60 600V N-Channel Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25 C, unless otherwise specified)
| PARAMETER | SYMBOL | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
| OFF CHARACTERISTICS | |||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V,ID=250μA | 600 | - | - | V | |
| Drain-Source Leakage Current | IDSS | VDS=600V,VGS=0V | - | - | 10 | μA | |
| Gate- Source Leakage Current | Forward | IGSS | VG=30V,VDS=0V | - | - | 100 | nA |
| Reverse | VGS=-30V,VDS=0V | - | - | -100 | nA | ||
| ON CHARACTERISTICS | |||||||
| Gate Threshold Voltage | VGS(TH) | VDS=VGS,ID=250μA | 2.0 | - | 4.0 | V | |
| Static Drain-Source On-State Resistance | RDS(ON) | VGS=10V,ID=1.0A | - | 4 | 4.4 | Ω | |
| DYNAMIC CHARACTERISTICS | |||||||
| Input Capacitance | CISS | VDS=25V,VGS=0V,f=1MHz | - | 300 | pF | ||
| Output Capacitance | COSS | - | 45 | pF | |||
| Reverse Transfer Capacitance | CRSS | - | 2 | pF | |||
| SWITCHING CHARACTERISTICS | |||||||
| Turn-On Delay Time | tD(ON) | VDD=300V,ID=2A,RG=25Ω(Note1,2) | - | 10 | ns | ||
| Turn-On Rise Time | tR | - | 25 | ns | |||
| Turn-Off Delay Time | tD(OFF) | - | 20 | ns | |||
| Turn-Off Fall Time | tF | - | 25 | ns | |||
| Total Gate Charge | QG | VDS=480V,ID=2.4A,VGS=10V(Note1,2) | - | 5.7 | nC | ||
| Gate-Source Charge | QGS | - | 1.8 | nC | |||
| Gate-Drain Charge | QGD | - | 2 | nC | |||
| DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS | |||||||
| Drain-Source Diode Forward Voltage | VSD | VDS=0V,IS=2.0A | - | - | 1.4 | V | |
| Maximum Continuous Drain-Source Diode Forward Current | IS | - | - | - | 2.0 | A | |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | - | - | - | 8.0 | A | |
| Reverse Recovery Time | trr | VDS=0V,IS=2A,dIF/dt=100A/μs(Note 1) | - | 357 | - | ns | |
| Reverse Recovery Charge | QRR | - | 2 | - | μC | ||
Notes: 1. Pulse Test: Pulse width ≤300μS Duty cycle ≤2%.
2. Essentially independent of operating temperature.
FEATURES
- RDS(ON) <4.4Ω @ VGS=10V, ID=1A
- Fast switching capability
- Lead free in compliance with EU RoHS directive
- Improved dv/dt capability, high ruggedness
MECHANICAL DATA
- Case: TO-220, ITO-220, TO-251, TO-252, TO-262,TO-263 Package
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FAQ
Q1: ABOUT PACKAGE
A1: (1) For Through Hole diode: Tape Reel Packing
(2) For SMD diode: Tape Reel Packing
(3) For High Power diode: Anti-Static Plastic Tubes
Q2: RELATE TO FREE SAMPLE
A2: We can provide customers samples for free, the maximum sample quantity is 50 pcs. Customers only pay for the freight cost.
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A3: (1) T/T ( ware transfer )
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